High-speed and on-silicon-chip graphene blackbody…

High-speed and on-silicon-chip graphene blackbody emitters

Integrated light emitters for optical communications

Graphene is a two-dimensional nanocarbon material, having unique properties in electronic, optical and thermal properties, which can be applied for optoelectronic devices. Graphene-based blackbody emitters are also promising light emitters on silicon chip in NIR and mid-infrared region. However, although graphene-based blackbody emitters have been demonstrated under steady-state conditions or relatively slow modulation (100 kHz), the transient properties of these emitters under high-speed modulation have not been reported to date. Also, the optical communications with graphene-based emitters have never been demonstrated.

Here, a highly integrated, high-speed and on-chip blackbody emitter based on graphene in NIR region including telecommunication wavelength was demonstrated. A fast response time of ~ 100 ps, which is ~ 105 higher than the previous graphene emitters, has been experimentally demonstrated for single and few-layer graphene, the emission responses can be controlled by the graphene contact with the substrate depending on the number of graphene layers. The mechanisms of the high-speed emission are elucidated by performing theoretical calculations of the heat conduction equations considering the thermal model of emitters including graphene and a substrate.

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