Defects In Metal Oxides May Be Key To Their Performance
A newly published study details how defects in metal oxides may be key to their performance for a variety of high-tech applications.
Sometimes things that are technically defects, such as imperfections in a material’s crystal lattice, can actually produce changes in properties that open up new kinds of useful applications. New research from a team at MIT shows that such imperfections in a family of materials known as insulating metal oxides may be key to their performance for a variety of high-tech applications, such as nonvolatile memory chips and energy conversion technologies.
The findings are reported this week in the journal Physical Review Letters, in a paper by MIT Associate Professor Bilge Yildiz, Professor and Associate Provost Krystyn Van Vliet, and former postdoc Mostafa Youssef.
These metal oxide materials have been investigated by many researchers, Yildiz says, and “their properties are highly governed by the number and the kind of defects that are present.” When subjected to strong driving forces, such as strong electric fields, “the behavior of such defects had not been well-understood,” she says.
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